Article Dans Une Revue Nano Letters Année : 2025

MgO Tunneling Spintronics across Capacitively Coupled Atomic Clusters

Léo Petitdemange
Bertrand Vileno
Michel Hehn
Daniel Lacour

Résumé

Transport across model junctions built by using atomic tip or lateral techniques can generate exotic quantum signatures. However, so far, a viable industrial pathway for atomdriven electronics has been lacking. Here, we demonstrate that a commercialized device platform can help to fill this nanotechnological gap. According to conducting tip atomic force microscopy, inserting C atoms into an ultrathin MgO layer generates nanotransport paths. Across microscale magnetic tunnel junctions, resonant tunneling causes large magnetoresistance peaks that we attribute to spin accumulation onto a C nanodot that the channels transport. We ascribe the concurrent presence of a spectrally localized, nonlinear current noise and a persistent memory effect to the charging of a 'gating' C nanodot, adjacent to the 'transport' C nanodot. This nanoscale dual-dot description of quantum transport across spin states within a microscale magnetic tunnel junction should stimulate further research toward maturing spintronics into a viable quantum technological track.

Fichier principal
Vignette du fichier
MgOC ReResub V2.11.pdf (8.37 Mo) Télécharger le fichier
Origine Fichiers produits par l'(les) auteur(s)
licence

Dates et versions

hal-05457364 , version 1 (14-01-2026)

Licence

Identifiants

Citer

Mathieu Lamblin, Victor da Costa, Loïc Joly, Bhavishya Chowrira, Léo Petitdemange, et al.. MgO Tunneling Spintronics across Capacitively Coupled Atomic Clusters. Nano Letters, 2025, 25 (52), pp.18026-18035. ⟨10.1021/acs.nanolett.5c03672⟩. ⟨hal-05457364⟩
248 Consultations
256 Téléchargements

Altmetric

Partager

  • More